Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process

Photoelectric Dual Control Negative Differential Resistance Device Fabricated by Standard CMOS Process

To prepare a desired negative differential resistance (NDR) device by standard complementary-metal-oxide-semiconductor (CMOS) process, a photoelectric dual control NDR device with a PNP bipolar-junction-transistor (BJT) and an NPN BJT was designed and fabricated by using the Si-base standard 0.18 &a...

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Bibliographic Details
Main Authors: Jia Cong, Luhong Mao, Sheng Xie, Fan Zhao, Dong Yan, Weilian Guo
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Photonics Journal
Subjects:
CMOS
negative differential resistance (NDR)
peak-to-valley current ratio (PVCR)
photoelectric devices
and optical switch.
Online Access:https://ieeexplore.ieee.org/document/8692440/

Internet

https://ieeexplore.ieee.org/document/8692440/

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