Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs

Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs

Abstract This paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation. The two structures are characterized by diffe...

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Main Authors: F. Di Capua, M. Campajola, D. Fiore, L. Gasparini, E. Sarnelli, A. Aloisio
Format: Article
Language:English
Published: Nature Publishing Group 2021-04-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-021-87962-w
id doaj-ec4e245a0e4f4d658edce38ceaaf5781
record_format Article
spelling doaj-ec4e245a0e4f4d658edce38ceaaf57812021-04-25T11:34:11ZengNature Publishing GroupScientific Reports2045-23222021-04-0111111210.1038/s41598-021-87962-wInvestigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADsF. Di Capua0M. Campajola1D. Fiore2L. Gasparini3E. Sarnelli4A. Aloisio5Department of Physics “E. Pancini”, University of Naples Federico IIDepartment of Physics “E. Pancini”, University of Naples Federico IICenter National d’Etudes SpatialesFondazione Bruno Kessler (FBK), Integrated Radiation and Image Sensors DivisionCNR-SPIN InstituteDepartment of Physics “E. Pancini”, University of Naples Federico IIAbstract This paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation. The two structures are characterized by different junction types: the first structure is constituted by a P+/Nwell junction, while the second is formed by a Pwell/Niso junction. RTS occurrence has been measured in about one thousand SPAD pixels and the differences addressed in two layouts are motivated and discussed. Hypotheses on the RTS origin are drawn by analyzing the RTS time constants and the RTS occurrence evolution as a function of the annealing temperature.https://doi.org/10.1038/s41598-021-87962-w
collection DOAJ
language English
format Article
sources DOAJ
author F. Di Capua
M. Campajola
D. Fiore
L. Gasparini
E. Sarnelli
A. Aloisio
spellingShingle F. Di Capua
M. Campajola
D. Fiore
L. Gasparini
E. Sarnelli
A. Aloisio
Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
Scientific Reports
author_facet F. Di Capua
M. Campajola
D. Fiore
L. Gasparini
E. Sarnelli
A. Aloisio
author_sort F. Di Capua
title Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
title_short Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
title_full Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
title_fullStr Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
title_full_unstemmed Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs
title_sort investigation of random telegraph signal in two junction layouts of proton irradiated cmos spads
publisher Nature Publishing Group
series Scientific Reports
issn 2045-2322
publishDate 2021-04-01
description Abstract This paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation. The two structures are characterized by different junction types: the first structure is constituted by a P+/Nwell junction, while the second is formed by a Pwell/Niso junction. RTS occurrence has been measured in about one thousand SPAD pixels and the differences addressed in two layouts are motivated and discussed. Hypotheses on the RTS origin are drawn by analyzing the RTS time constants and the RTS occurrence evolution as a function of the annealing temperature.
url https://doi.org/10.1038/s41598-021-87962-w
work_keys_str_mv AT fdicapua investigationofrandomtelegraphsignalintwojunctionlayoutsofprotonirradiatedcmosspads
AT mcampajola investigationofrandomtelegraphsignalintwojunctionlayoutsofprotonirradiatedcmosspads
AT dfiore investigationofrandomtelegraphsignalintwojunctionlayoutsofprotonirradiatedcmosspads
AT lgasparini investigationofrandomtelegraphsignalintwojunctionlayoutsofprotonirradiatedcmosspads
AT esarnelli investigationofrandomtelegraphsignalintwojunctionlayoutsofprotonirradiatedcmosspads
AT aaloisio investigationofrandomtelegraphsignalintwojunctionlayoutsofprotonirradiatedcmosspads
_version_ 1721509627505410048

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