Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs

Abstract This paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation. The two structures are characterized by diffe...

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Bibliographic Details
Main Authors: F. Di Capua, M. Campajola, D. Fiore, L. Gasparini, E. Sarnelli, A. Aloisio
Format: Article
Language:English
Published: Nature Publishing Group 2021-04-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-021-87962-w