ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices
Hydrogen peroxide treatment induces the phase transformation of hexagonal ZnO to cubic ZnO2 on the surface of the ZnO switching memory film; this oxidation process effectively reduces the concentration of n-type donor defects (oxygen vacancies and zinc interstitials) in the switching film. The chemi...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-05-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5092991 |