A Split Island Layout Style of Butting/Inserted Substrate Pickups for NMOSFET ESD Reliability
Butting/inserted pickup layout style could result in severe ESD degradation of NMOS devices beyond deep submicron technology. A split island layout style of butting/inserted substrate pickups is designed for a multifinger NMOS structure to enhance its ESD reliability. This layout style divides the s...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2015-01-01
|
| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2015/691403 |