Ga2O3 nanowires preparation at atmospheric pressure
An attempt has been undertaken to produce gallium oxide nanowires by thermal synthesis from metallic gallium source at atmospheric pressure. Silicon substrates of (1 0 0) and (1 1 1) orientation with and without silicon oxide layers (0.5 μm) were used as support. Evaporated thin gold films were depo...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Sciendo
2017-07-01
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| Series: | Materials Science-Poland |
| Subjects: | |
| Online Access: | http://www.degruyter.com/view/j/msp.2017.35.issue-2/msp-2017-0026/msp-2017-0026.xml?format=INT |