Direct Correlation of Ferroelectric Properties and Memory Characteristics in Ferroelectric Tunnel Junctions

Direct Correlation of Ferroelectric Properties and Memory Characteristics in Ferroelectric Tunnel Junctions

Ferroelectric memories have made big advancements in the last years due to the discovery of ferroelectricity in already widely used hafnium oxide. Here we investigate ferroelectric tunnel junctions (FTJ) consisting of a ferroelectric hafnium zirconium oxide layer and a dielectric aluminum oxide laye...

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Bibliographic Details
Main Authors: Benjamin Max, Michael Hoffmann, Stefan Slesazeck, Thomas Mikolajick
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Ferroelectrics
tunnel-junction
hafnium zirconium oxide
memory
Online Access:https://ieeexplore.ieee.org/document/8782578/

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