Temperature Dependence of Raman-Active In-Plane E2g Phonons in Layered Graphene and h-BN Flakes

Temperature Dependence of Raman-Active In-Plane E2g Phonons in Layered Graphene and h-BN Flakes

Abstract Thermal properties of sp2 systems such as graphene and hexagonal boron nitride (h-BN) have attracted significant attention because of both systems being excellent thermal conductors. This research reports micro-Raman measurements on the in-plane E2g optical phonon peaks (~ 1580 cm−1 in grap...

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Bibliographic Details
Main Authors: Xiaoli Li, Jian Liu, Kai Ding, Xiaohui Zhao, Shuai Li, Wenguang Zhou, Baolai Liang
Format: Article
Language:English
Published: SpringerOpen 2018-01-01
Series:Nanoscale Research Letters
Subjects:
Graphenes
h-BNs
In-plane E2g phonon
Temperature dependence
Online Access:http://link.springer.com/article/10.1186/s11671-018-2444-2

Internet

http://link.springer.com/article/10.1186/s11671-018-2444-2

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