Thermal Modeling of GaN HEMT Devices With Diamond Heat-Spreader

Harvesting the potential performance of GaN-based devices in terms of the areal power density and reliability, relies on the efficiency of their thermal management. Integration of extremely high thermal conductivity Single-crystalline CVD-diamond serves as an efficient solution to their strict therm...

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Bibliographic Details
Main Authors: M. Mahrokh, Hongyu Yu, Yuejin Guo
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9194004/