High Speed Back-Bias Voltage (VBB) Generator with Improved Pumping Current

Due to the advance of dynamic random access memory (DRAM) technologies with the steadfast increase of density with aggressively scaled storage capacitors, the supply voltage has been lowered to under 1 V to reduce power consumption. The above progress has been accompanied by the increasingly difficu...

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Bibliographic Details
Main Authors: Taegun Yim, Choongkeun Lee, Hongil Yoon
Format: Article
Language:English
Published: MDPI AG 2020-11-01
Series:Electronics
Subjects:
Online Access:https://www.mdpi.com/2079-9292/9/11/1835