Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires
Until now, efforts to enhance the performance of nanolasers have focused on reducing the rate of non-radiative recombination. Here, Burgess et al.employ controlled impurity doping to increase the rate of radiative recombination.
Main Authors: | Tim Burgess, Dhruv Saxena, Sudha Mokkapati, Zhe Li, Christopher R. Hall, Jeffrey A. Davis, Yuda Wang, Leigh M. Smith, Lan Fu, Philippe Caroff, Hark Hoe Tan, Chennupati Jagadish |
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Format: | Article |
Language: | English |
Published: |
Nature Publishing Group
2016-06-01
|
Series: | Nature Communications |
Online Access: | https://doi.org/10.1038/ncomms11927 |
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