Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

Until now, efforts to enhance the performance of nanolasers have focused on reducing the rate of non-radiative recombination. Here, Burgess et al.employ controlled impurity doping to increase the rate of radiative recombination.

Bibliographic Details
Main Authors: Tim Burgess, Dhruv Saxena, Sudha Mokkapati, Zhe Li, Christopher R. Hall, Jeffrey A. Davis, Yuda Wang, Leigh M. Smith, Lan Fu, Philippe Caroff, Hark Hoe Tan, Chennupati Jagadish
Format: Article
Language:English
Published: Nature Publishing Group 2016-06-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/ncomms11927

Internet

https://doi.org/10.1038/ncomms11927

Similar Items