Epitaxial lateral overgrowth of InN by rf-plasma-assisted molecular-beam epitaxy
The orientation-dependent lateral growth of InN was studied and the epitaxial lateral overgrowth (ELO) of InN by rf-plasma-assisted molecular-beam epitaxy was demonstrated for the first time using stripe molybdenum (Mo)-mask-patterned sapphire (0001) substrates. Transmission electron microscopy obse...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2011-12-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.3664138 |