The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures

The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures

The damage mechanism of proton irradiation in InP/InGaAs heterostructures was studied. The deep level traps were investigated in detail by deep level transient spectroscopy (DLTS), capacitance−voltage (C−V) measurements and SRIM (the stopping and range of ions in matter, Monte Ca...

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Bibliographic Details
Main Authors:	Xiaohong Zhao, Hongliang Lu, Manli Zhao, Yuming Zhang, Yimen Zhang
Format:	Article
Language:	English
Published:	MDPI AG 2019-08-01
Series:	Nanomaterials
Subjects:	proton irradiation deep level traps recombination current InP/InGaAs heterostructure
Online Access:	https://www.mdpi.com/2079-4991/9/8/1141

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