The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures
The damage mechanism of proton irradiation in InP/InGaAs heterostructures was studied. The deep level traps were investigated in detail by deep level transient spectroscopy (DLTS), capacitance−voltage (C−V) measurements and SRIM (the stopping and range of ions in matter, Monte Ca...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-08-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/9/8/1141 |