The Criterion for Choosing an Insulator for Sili-con MOS Structures
Nowadays, MIS structures based on silicon dioxide films have become the most widely used. However, the desire to reduce the channel length and the nano-scaling in electronics showed, that SiO2 can’t provide the specified MIS devices parameters and characteristics. This is due to the superfine insu...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Igor Sikorsky Kyiv Polytechnic Institute
2018-12-01
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| Series: | Mìkrosistemi, Elektronìka ta Akustika |
| Subjects: | |
| Online Access: | http://elc.kpi.ua/article/view/141435 |