Switching Characteristics and Mechanism Using Al<sub>2</sub>O<sub>3</sub> Interfacial Layer in Al/Cu/GdO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>/TiN Memristor

Switching Characteristics and Mechanism Using Al<sub>2</sub>O<sub>3</sub> Interfacial Layer in Al/Cu/GdO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>/TiN Memristor

Resistive switching characteristics by using the Al<sub>2</sub>O<sub>3</sub> interfacial layer in an Al/Cu/GdO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>/TiN memristor have been enhanced as compared to the Al/Cu/GdO<sub>x</sub>/TiN...

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Bibliographic Details
Main Authors: Chiao-Fan Chiu, Sreekanth Ginnaram, Asim Senapati, Yi-Pin Chen, Siddheswar Maikap
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Electronics
Subjects:
GdO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>
Cu filament
complementary resistive switching
hopping conduction
nonvolatile memory
Online Access:https://www.mdpi.com/2079-9292/9/9/1466

Internet

https://www.mdpi.com/2079-9292/9/9/1466

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