Effect of Al<sub>2</sub>O<sub>3</sub> Passivation on Electrical Properties of <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math></inline-formula>-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistor
We report on the effect of Al<sub>2</sub>O<sub>3</sub> surface passivation on electrical properties of beta-gallium oxide (β-Ga<sub>2</sub>O<sub>3</sub>) nanomembrane field-effect transistor (FET). The fabricated bottom-gate β -Ga...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8695169/ |