Effect of contaminations and surface preparation on the work function of single layer MoS2

Effect of contaminations and surface preparation on the work function of single layer MoS2

Thinning out MoS2 crystals to atomically thin layers results in the transition from an indirect to a direct bandgap material. This makes single layer MoS2 an exciting new material for electronic devices. In MoS2 devices it has been observed that the choice of materials, in particular for contact and...

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Bibliographic Details
Main Authors: Oliver Ochedowski, Kolyo Marinov, Nils Scheuschner, Artur Poloczek, Benedict Kleine Bussmann, Janina Maultzsch, Marika Schleberger
Format: Article
Language:English
Published: Beilstein-Institut 2014-03-01
Series:Beilstein Journal of Nanotechnology
Subjects:
KPFM
MoS2
NC-AFM
surface potential
work function
Online Access:https://doi.org/10.3762/bjnano.5.32

Internet

https://doi.org/10.3762/bjnano.5.32

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