Investigation of high threshold voltage E-mode AlGaN/GaN MIS-HEMT with triple barrier layer

Investigation of high threshold voltage E-mode AlGaN/GaN MIS-HEMT with triple barrier layer

A comprehensive study on an E-mode AlGaN/GaN MIS-HEMT with triple barrier layer is conducted by Silvaco TCAD software. The effect of geometric parameters of gate dielectric layer, including the length of both sides and the recessed depth, on the device is studied. The simulation results show that th...

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Bibliographic Details
Main Authors: Fan Xia, Huiqing Sun, Zhibin Liu, Xiaoyu Xia, Xiuyang Tan, Jiancheng Ma, Miao Zhang, Zhiyou Guo
Format: Article
Language:English
Published: Elsevier 2021-06-01
Series:Results in Physics
Subjects:
GaN
MIS-HEMT
High threshold voltage
Triple barrier layer
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379721003363

Internet

http://www.sciencedirect.com/science/article/pii/S2211379721003363

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