A Simple Model for the Thermal Noise of Saturated MOSFETs at All Inversion Levels
We propose a single formula for the channel thermal noise of saturated long-channel MOSFETs operating in weak, moderate, and strong inversion. Our approach is based on a novel interpolation of well-known analytical formulas known to be valid in weak and strong inversion, and the result is both accur...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8031315/ |