A gate-free monolayer WSe2 pn diode

A gate-free monolayer WSe2 pn diode

Bringing together p- and n-type monolayers of semiconducting transition metal dichalcogenides results in the formation of atomically thin pn junctions. Here, the authors laterally manipulate carrier density to create a WSe2 pn homojunction on a supporting ferroelectric BiFeO3 substrate.

Bibliographic Details
Main Authors: Jhih-Wei Chen, Shun-Tsung Lo, Sheng-Chin Ho, Sheng-Shong Wong, Thi-Hai-Yen Vu, Xin-Quan Zhang, Yi-De Liu, Yu-You Chiou, Yu-Xun Chen, Jan-Chi Yang, Yi-Chun Chen, Ying-Hao Chu, Yi-Hsien Lee, Chung-Jen Chung, Tse-Ming Chen, Chia-Hao Chen, Chung-Lin Wu
Format: Article
Language:English
Published: Nature Publishing Group 2018-08-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-018-05326-x
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spelling doaj-e41776571763424b93505d2150065c4d2021-05-11T09:55:01ZengNature Publishing GroupNature Communications2041-17232018-08-01911710.1038/s41467-018-05326-xA gate-free monolayer WSe2 pn diodeJhih-Wei Chen0Shun-Tsung Lo1Sheng-Chin Ho2Sheng-Shong Wong3Thi-Hai-Yen Vu4Xin-Quan Zhang5Yi-De Liu6Yu-You Chiou7Yu-Xun Chen8Jan-Chi Yang9Yi-Chun Chen10Ying-Hao Chu11Yi-Hsien Lee12Chung-Jen Chung13Tse-Ming Chen14Chia-Hao Chen15Chung-Lin Wu16Department of Physics, National Cheng Kung UniversityDepartment of Physics, National Cheng Kung UniversityDepartment of Physics, National Cheng Kung UniversityDepartment of Physics, National Cheng Kung UniversityDepartment of Physics, National Cheng Kung UniversityDepartment of Materials Science and Engineering, National Tsing Hua UniversityDepartment of Physics, National Cheng Kung UniversityDepartment of Physics, National Cheng Kung UniversityDepartment of Electrophysics, National Chiao Tung UniversityDepartment of Physics, National Cheng Kung UniversityDepartment of Physics, National Cheng Kung UniversityDepartment of Materials Science and Engineering, National Chiao Tung UniversityDepartment of Materials Science and Engineering, National Tsing Hua UniversityCenter for Micro/Nano Science and Technology, National Cheng Kung UniversityDepartment of Physics, National Cheng Kung UniversityNational Synchrotron Radiation Research Center (NSRRC)Department of Physics, National Cheng Kung UniversityBringing together p- and n-type monolayers of semiconducting transition metal dichalcogenides results in the formation of atomically thin pn junctions. Here, the authors laterally manipulate carrier density to create a WSe2 pn homojunction on a supporting ferroelectric BiFeO3 substrate.https://doi.org/10.1038/s41467-018-05326-x
collection DOAJ
language English
format Article
sources DOAJ
author Jhih-Wei Chen
Shun-Tsung Lo
Sheng-Chin Ho
Sheng-Shong Wong
Thi-Hai-Yen Vu
Xin-Quan Zhang
Yi-De Liu
Yu-You Chiou
Yu-Xun Chen
Jan-Chi Yang
Yi-Chun Chen
Ying-Hao Chu
Yi-Hsien Lee
Chung-Jen Chung
Tse-Ming Chen
Chia-Hao Chen
Chung-Lin Wu
spellingShingle Jhih-Wei Chen
Shun-Tsung Lo
Sheng-Chin Ho
Sheng-Shong Wong
Thi-Hai-Yen Vu
Xin-Quan Zhang
Yi-De Liu
Yu-You Chiou
Yu-Xun Chen
Jan-Chi Yang
Yi-Chun Chen
Ying-Hao Chu
Yi-Hsien Lee
Chung-Jen Chung
Tse-Ming Chen
Chia-Hao Chen
Chung-Lin Wu
A gate-free monolayer WSe2 pn diode
Nature Communications
author_facet Jhih-Wei Chen
Shun-Tsung Lo
Sheng-Chin Ho
Sheng-Shong Wong
Thi-Hai-Yen Vu
Xin-Quan Zhang
Yi-De Liu
Yu-You Chiou
Yu-Xun Chen
Jan-Chi Yang
Yi-Chun Chen
Ying-Hao Chu
Yi-Hsien Lee
Chung-Jen Chung
Tse-Ming Chen
Chia-Hao Chen
Chung-Lin Wu
author_sort Jhih-Wei Chen
title A gate-free monolayer WSe2 pn diode
title_short A gate-free monolayer WSe2 pn diode
title_full A gate-free monolayer WSe2 pn diode
title_fullStr A gate-free monolayer WSe2 pn diode
title_full_unstemmed A gate-free monolayer WSe2 pn diode
title_sort gate-free monolayer wse2 pn diode
publisher Nature Publishing Group
series Nature Communications
issn 2041-1723
publishDate 2018-08-01
description Bringing together p- and n-type monolayers of semiconducting transition metal dichalcogenides results in the formation of atomically thin pn junctions. Here, the authors laterally manipulate carrier density to create a WSe2 pn homojunction on a supporting ferroelectric BiFeO3 substrate.
url https://doi.org/10.1038/s41467-018-05326-x
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