A gate-free monolayer WSe2 pn diode

A gate-free monolayer WSe2 pn diode

Bringing together p- and n-type monolayers of semiconducting transition metal dichalcogenides results in the formation of atomically thin pn junctions. Here, the authors laterally manipulate carrier density to create a WSe2 pn homojunction on a supporting ferroelectric BiFeO3 substrate.

Bibliographic Details
Main Authors: Jhih-Wei Chen, Shun-Tsung Lo, Sheng-Chin Ho, Sheng-Shong Wong, Thi-Hai-Yen Vu, Xin-Quan Zhang, Yi-De Liu, Yu-You Chiou, Yu-Xun Chen, Jan-Chi Yang, Yi-Chun Chen, Ying-Hao Chu, Yi-Hsien Lee, Chung-Jen Chung, Tse-Ming Chen, Chia-Hao Chen, Chung-Lin Wu
Format: Article
Language:English
Published: Nature Publishing Group 2018-08-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-018-05326-x

Internet

https://doi.org/10.1038/s41467-018-05326-x

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