Electro-absorption and Electro-optic Characterization of L-Band InAs/InP Quantum-dash Waveguide
Electro-absorption and electro-optic characteristics of InAs/InP quantum-dash active region-based waveguide, emitting at ~1600 nm is investigated. Two major peaks were observed in the change of absorption spectrum with a maximum value of 7070 cm<sup>-1</sup> at a bias voltage of -8V with...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2020-01-01
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Series: | IEEE Photonics Journal |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9072590/ |