Experimental Observation and Simulation Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO₂ Capacitor

• Main Authors: Kyungmin Jang, Nozomu Ueyama, Masaharu Kobayashi, Toshiro Hiramoto
• Format: Article
• Language: English
• Published: IEEE 2018-01-01
• Series: IEEE Journal of the Electron Devices Society
• Subjects: Ferroelectric; hafnium-zirconium oxide; negative-capacitance; Landau-Khalatnikov theory; multiple domain
• Online Access: https://ieeexplore.ieee.org/document/8301014/
• ISSN: 2168-6734

We have experimentally observed the negative-capacitance transient effect in a ferroelectric HfZrO₂ (FE-HZO) capacitor and developed an equivalent circuit model based on the Landau- Khalatnikov (LK) theory. By considering multiple domains (MD) and domain interaction, an MD-LK model precisely reproduced the experimental dynamic characteristics in an FE-HZO capacitor with the various input voltage amplitude and external resistance. The MD-LK model was successfully validated as a dynamic model for FE-HZO capacitor. The MD-LK model is highly expected as a useful simulation model for the dynamic NCFET with a multi-domain FE-HZO gate insulator.