Low-Voltage Permittivity Control of Coplanar Lines Based on Hafnium Oxide Ferroelectrics Grown on Silicon

Low-Voltage Permittivity Control of Coplanar Lines Based on Hafnium Oxide Ferroelectrics Grown on Silicon

This paper is dedicated to the study of the tunable electromagnetic properties of HfO2 doped with Zr (further referred to as HfZrO) grown on high-resistivity silicon using atomic layer deposition (ALD) techniques. Two metallic coplanar lines patterned on HfZrO having different lengths have been used...

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Bibliographic Details
Main Authors: M. Aldrigo, M. Dragoman, S. Iordanescu, F. Nastase, S. Vulpe, A. Dinescu, D. Vasilache
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Access
Subjects:
Ferroelectric films
microwave measurements
transmission lines
tunable circuits and devices
Online Access:https://ieeexplore.ieee.org/document/8844654/

Internet

https://ieeexplore.ieee.org/document/8844654/

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