Analyzing the Effects of Interconnect Parasitics in the STT CRAM In-Memory Computational Platform

Analyzing the Effects of Interconnect Parasitics in the STT CRAM In-Memory Computational Platform

This article presents a method for analyzing the parasitic effects of interconnects on the performance of the STT-MTJ-based computational random access memory (CRAM) in-memory computation platform. The CRAM is a platform that makes a small reconfiguration to a standard spintronics-based memory array...

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Bibliographic Details
Main Authors: Masoud Zabihi, Arvind K. Sharma, Meghna G. Mankalale, Zamshed Iqbal Chowdhury, Zhengyang Zhao, Salonik Resch, Ulya R. Karpuzcu, Jian-Ping Wang, Sachin S. Sapatnekar
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Subjects:
In-memory computing
spin-transfer torque computational random access memory (STT-CRAM)
spintronics
Online Access:https://ieeexplore.ieee.org/document/9056847/

Internet

https://ieeexplore.ieee.org/document/9056847/

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