Mobility Degradation Models for Electrons in Inversion Layers of Silicon
Carrier mobility in silicon inversion layers is an important parameter that reflects carrier transport mechanisms. It is very important to accurately model the effective mobility of carriers for the accurate calculation of the drain current using device simulation programs. This becomes more importa...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
1999-01-01
|
| Series: | Journal of King Saud University: Engineering Sciences |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S1018363918309917 |