Gate recess study for high thermal stability pHEMT devices
Gate formation is a crucial steps, especially in FET fabrication process. At this steps, the characteristics are very much influenced by the processing parameters, particularly in the processing temperature. In this paper, we report the thermal stability study and sidewall etch to reduce the off-sta...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2017-01-01
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| Series: | EPJ Web of Conferences |
| Online Access: | https://doi.org/10.1051/epjconf/201716201047 |