Strain field determination in III–V heteroepitaxy coupling finite elements with experimental and theoretical techniques at the nanoscale
We are briefly reviewing the current status of elastic strain field determination in III–V heteroepitaxial nanostructures, linking finite elements (FE) calculations with quantitative nanoscale imaging and atomistic calculation techniques. III–V semiconductor nanostructure systems of various dimensio...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2017-04-01
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| Series: | Journal of the Mechanical Behavior of Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/jmbm-2017-0009 |