Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

Atomically thin molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) semiconductor with a multitude of interesting properties and promising device applications spanning all realms of electronics and optoelect...

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Bibliographic Details
Main Authors: Amritesh Rai, Hema C. P. Movva, Anupam Roy, Deepyanti Taneja, Sayema Chowdhury, Sanjay K. Banerjee
Format: Article
Language:English
Published: MDPI AG 2018-08-01
Series:Crystals
Subjects:
two-dimensional (2D) materials
transition metal dichalcogenides (TMDCs)
molybdenum disulfide (MoS2)
field-effect transistors (FETs)
Schottky barrier (SB)
tunneling
contact resistance (RC)
doping
mobility (µ)
scattering
dielectrics
Online Access:http://www.mdpi.com/2073-4352/8/8/316

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http://www.mdpi.com/2073-4352/8/8/316

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