Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs
Abstract In this work, we proposed an accurate analytical model for the estimation of the channel maximum temperature of Ga2O3 MOSFETs with native or high-thermal-conductivity substrates. The thermal conductivity of Ga2O3 is anisotropic and decreases significantly with increasing temperature, which...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2021-02-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-021-03490-6 |