Room-temperature photoluminescence of Mg-doped GaN thin films grown by plasma-assisted MOCVD
The growth of Mg-doped GaN thin films by metalorganic chemical vapor deposition (MOCVD) using NH3 and Cp2Mg as a source of nitrogen and Mg, respectively, usually produces Mg–H complexes, which hinder the activation of Mg as shallow acceptor centers. Therefore, post-growth treatments are commonly req...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0004384 |