Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach

• Main Authors: Alexander Makarov, Philippe Roussel, Erik Bury, Michiel Vandemaele, Alessio Spessot, Dimitri Linten, Ben Kaczer, Stanislav Tyaginov
• Format: Article
• Language: English
• Published: MDPI AG 2020-06-01
• Series: Micromachines
• Subjects: hot-carrier degradation; random dopants; variability; physical modeling; FinFETs; carrier transport
• Online Access: https://www.mdpi.com/2072-666X/11/7/657

We identify correlation between the drain currents in pristine n-channel FinFET transistors and changes in time-0 currents induced by hot-carrier stress. To achieve this goal, we employ our statistical simulation model for hot-carrier degradation (HCD), which considers the effect of random dopants (RDs) on HCD. For this analysis we generate a set of 200 device instantiations where each of them has its own unique configuration of RDs. For all “samples” in this ensemble we calculate time-0 currents (i.e. currents in undamaged FinFETs) and then degradation characteristics such as changes in the linear drain current and device lifetimes. The robust correlation analysis allows us to identify correlation between transistor lifetimes and drain currents in unstressed devices, which implies that FinFETs with initially higher currents degrade faster, i.e. have more prominent linear drain current changes and shorter lifetimes. Another important result is that although at stress conditions the distribution of drain currents becomes wider with stress time, in the operating regime drain current variability diminishes. Finally, we show that if random traps are also taken into account, all the obtained trends remain the same.