Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach

Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach

We identify correlation between the drain currents in pristine n-channel FinFET transistors and changes in time-0 currents induced by hot-carrier stress. To achieve this goal, we employ our statistical simulation model for hot-carrier degradation (HCD), which considers the effect of random dopants (...

Full description

Bibliographic Details
Main Authors: Alexander Makarov, Philippe Roussel, Erik Bury, Michiel Vandemaele, Alessio Spessot, Dimitri Linten, Ben Kaczer, Stanislav Tyaginov
Format: Article
Language:English
Published: MDPI AG 2020-06-01
Series:Micromachines
Subjects:
hot-carrier degradation
random dopants
variability
physical modeling
FinFETs
carrier transport
Online Access:https://www.mdpi.com/2072-666X/11/7/657

Internet

https://www.mdpi.com/2072-666X/11/7/657

Similar Items