Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer

Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer

Both unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors are observed in Cu2O/Ga2O3 stacked layer. The conversion between BRS and URS is controllable and reversible. The switching operations in BRS mode requires smaller voltage than that in the URS mode. The oxygen vac...

Full description

Bibliographic Details
Main Authors: Y. S. Zhi, P. G. Li, P. C. Wang, D. Y. Guo, Y. H. An, Z. P. Wu, X. L. Chu, J. Q. Shen, W. H. Tang, C. R. Li
Format: Article
Language:English
Published: AIP Publishing LLC 2016-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4941061
id doaj-ddb5a2ba222c4c099369952e42754206
record_format Article
spelling doaj-ddb5a2ba222c4c099369952e427542062020-11-24T21:30:41ZengAIP Publishing LLCAIP Advances2158-32262016-01-0161015215015215-810.1063/1.4941061061601ADVReversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layerY. S. Zhi0P. G. Li1P. C. Wang2D. Y. Guo3Y. H. An4Z. P. Wu5X. L. Chu6J. Q. Shen7W. H. Tang8C. R. Li9Center for Optoelectronic Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, ChinaCenter for Optoelectronic Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, ChinaCenter for Optoelectronic Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, ChinaState Key Laboratory of InformationPhotonics & Optical Communication, Beijing University of Posts and Telecommunications, Beijing, 100876, ChinaState Key Laboratory of InformationPhotonics & Optical Communication, Beijing University of Posts and Telecommunications, Beijing, 100876, ChinaState Key Laboratory of InformationPhotonics & Optical Communication, Beijing University of Posts and Telecommunications, Beijing, 100876, ChinaState Key Laboratory of InformationPhotonics & Optical Communication, Beijing University of Posts and Telecommunications, Beijing, 100876, ChinaCenter for Optoelectronic Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, ChinaState Key Laboratory of InformationPhotonics & Optical Communication, Beijing University of Posts and Telecommunications, Beijing, 100876, ChinaCenter for Optoelectronic Materials and Devices, Zhejiang Sci-Tech University, Hangzhou 310018, ChinaBoth unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors are observed in Cu2O/Ga2O3 stacked layer. The conversion between BRS and URS is controllable and reversible. The switching operations in BRS mode requires smaller voltage than that in the URS mode. The oxygen vacancies closed to the Cu2O/Ga2O3 interface contributes to the BRS, and the bias-controlling filament formation/rupture in depletion layer is considered to contribute to the URS. The URS happens only in the negative voltage part due to the nature of directionality of the p-n junction. The process reported here can be developed to design memory device.http://dx.doi.org/10.1063/1.4941061
collection DOAJ
language English
format Article
sources DOAJ
author Y. S. Zhi
P. G. Li
P. C. Wang
D. Y. Guo
Y. H. An
Z. P. Wu
X. L. Chu
J. Q. Shen
W. H. Tang
C. R. Li
spellingShingle Y. S. Zhi
P. G. Li
P. C. Wang
D. Y. Guo
Y. H. An
Z. P. Wu
X. L. Chu
J. Q. Shen
W. H. Tang
C. R. Li
Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer
AIP Advances
author_facet Y. S. Zhi
P. G. Li
P. C. Wang
D. Y. Guo
Y. H. An
Z. P. Wu
X. L. Chu
J. Q. Shen
W. H. Tang
C. R. Li
author_sort Y. S. Zhi
title Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer
title_short Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer
title_full Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer
title_fullStr Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer
title_full_unstemmed Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer
title_sort reversible transition between bipolar and unipolar resistive switching in cu2o/ga2o3 binary oxide stacked layer
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2016-01-01
description Both unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors are observed in Cu2O/Ga2O3 stacked layer. The conversion between BRS and URS is controllable and reversible. The switching operations in BRS mode requires smaller voltage than that in the URS mode. The oxygen vacancies closed to the Cu2O/Ga2O3 interface contributes to the BRS, and the bias-controlling filament formation/rupture in depletion layer is considered to contribute to the URS. The URS happens only in the negative voltage part due to the nature of directionality of the p-n junction. The process reported here can be developed to design memory device.
url http://dx.doi.org/10.1063/1.4941061
work_keys_str_mv AT yszhi reversibletransitionbetweenbipolarandunipolarresistiveswitchingincu2oga2o3binaryoxidestackedlayer
AT pgli reversibletransitionbetweenbipolarandunipolarresistiveswitchingincu2oga2o3binaryoxidestackedlayer
AT pcwang reversibletransitionbetweenbipolarandunipolarresistiveswitchingincu2oga2o3binaryoxidestackedlayer
AT dyguo reversibletransitionbetweenbipolarandunipolarresistiveswitchingincu2oga2o3binaryoxidestackedlayer
AT yhan reversibletransitionbetweenbipolarandunipolarresistiveswitchingincu2oga2o3binaryoxidestackedlayer
AT zpwu reversibletransitionbetweenbipolarandunipolarresistiveswitchingincu2oga2o3binaryoxidestackedlayer
AT xlchu reversibletransitionbetweenbipolarandunipolarresistiveswitchingincu2oga2o3binaryoxidestackedlayer
AT jqshen reversibletransitionbetweenbipolarandunipolarresistiveswitchingincu2oga2o3binaryoxidestackedlayer
AT whtang reversibletransitionbetweenbipolarandunipolarresistiveswitchingincu2oga2o3binaryoxidestackedlayer
AT crli reversibletransitionbetweenbipolarandunipolarresistiveswitchingincu2oga2o3binaryoxidestackedlayer
_version_ 1725962300530098176

Similar Items