Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer

Reversible transition between bipolar and unipolar resistive switching in Cu2O/Ga2O3 binary oxide stacked layer

Both unipolar resistive switching (URS) and bipolar resistive switching (BRS) behaviors are observed in Cu2O/Ga2O3 stacked layer. The conversion between BRS and URS is controllable and reversible. The switching operations in BRS mode requires smaller voltage than that in the URS mode. The oxygen vac...

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Bibliographic Details
Main Authors: Y. S. Zhi, P. G. Li, P. C. Wang, D. Y. Guo, Y. H. An, Z. P. Wu, X. L. Chu, J. Q. Shen, W. H. Tang, C. R. Li
Format: Article
Language:English
Published: AIP Publishing LLC 2016-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4941061

Internet

http://dx.doi.org/10.1063/1.4941061

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