Nanofabrication of Vertically Aligned 3D GaN Nanowire Arrays with Sub-50 nm Feature Sizes Using Nanosphere Lift-off Lithography

Nanofabrication of Vertically Aligned 3D GaN Nanowire Arrays with Sub-50 nm Feature Sizes Using Nanosphere Lift-off Lithography

Vertically aligned 3D gallium nitride (GaN) nanowire arrays with sub-50 nm feature sizes were fabricated using a nanosphere lift-off lithography (NSLL) technique combined with hybrid top-down etching steps (i.e., inductively coupled plasma dry reactive ion etching (ICP-DRIE) and wet chemical etching...

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Bibliographic Details
Main Authors: Tony Granz, Shinta Mariana, Gerry Hamdana, Feng Yu, Muhammad Fahlesa Fatahilah, Irene Manglano Clavero, Prabowo Puranto, Zhi Li, Uwe Brand, Joan Daniel Prades, Erwin Peiner, Andreas Waag, Hutomo Suryo Wasisto
Format: Article
Language:English
Published: MDPI AG 2017-08-01
Series:Proceedings
Subjects:
colloidal lithography
nanosphere lithography
nanostructure fabrication
gallium nitride (GaN)
ICP-DRIE
wet chemical etching
selective area deposition
GaN surface treatment
Online Access:https://www.mdpi.com/2504-3900/1/4/309

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https://www.mdpi.com/2504-3900/1/4/309

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