Promise and Challenges of High-Voltage SiC Bipolar Power Devices

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taki...

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Bibliographic Details
Main Authors: Tsunenobu Kimoto, Kyosuke Yamada, Hiroki Niwa, Jun Suda
Format: Article
Language:English
Published: MDPI AG 2016-11-01
Series:Energies
Subjects:
silicon carbide
power device
carrier lifetime
conductivity modulation
(merged pin-Schottky) diodes
Online Access:http://www.mdpi.com/1996-1073/9/11/908

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http://www.mdpi.com/1996-1073/9/11/908

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