Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE

Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE

Abstract Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on bare Si, and the growth shifted to compact film whe...

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Bibliographic Details
Main Authors: Aihua Zhong, Ping Fan, Yuanting Zhong, Dongping Zhang, Fu Li, Jingting Luo, Yizhu Xie, Kazuhiro Hane
Format: Article
Language:English
Published: SpringerOpen 2018-02-01
Series:Nanoscale Research Letters
Subjects:
GaN
Nanowall network
Growth model
Al droplets
Online Access:http://link.springer.com/article/10.1186/s11671-018-2461-1

Internet

http://link.springer.com/article/10.1186/s11671-018-2461-1

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