Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth
We report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are presented, indicating the upscale potential of thi...
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/12/13/2179 |
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doaj-dc900fad270548338369b4aaf252e55d2020-11-24T20:43:51ZengMDPI AGMaterials1996-19442019-07-011213217910.3390/ma12132179ma12132179Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase GrowthPhilipp Schuh0Francesco La Via1Marco Mauceri2Marcin Zielinski3Peter J. Wellmann4Crystal Growth Lab, Materials Department 6 (i-meet), FAU Erlangen-Nuremberg, Martensstr. 7, D-91058 Erlangen, GermanyCNR-IMM, sezione di Catania, Stradale Primosole 50, I-95121 Catania, ItalyLPE S.P.A., Sedicesima Strada, I-95121 Catania, ItalyNOVASiC, Savoie Technolac, BP267, F-73375 Le Bourget-du-Lac Cedex, FranceCrystal Growth Lab, Materials Department 6 (i-meet), FAU Erlangen-Nuremberg, Martensstr. 7, D-91058 Erlangen, GermanyWe report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are presented, indicating the upscale potential of this process. The nucleation and growth of cubic silicon carbide is supported by XRD and Raman measurements. The rocking curve data yield a full-width-at-half-maximum (FWHM) between 138 to 140 arc sec for such grown material. Analysis of the inbuilt stress of the bulk-like material shows no indications of any residual stress.https://www.mdpi.com/1996-1944/12/13/21793C-SiCPVTsublimation sandwichstress-freebulklarge area |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Philipp Schuh Francesco La Via Marco Mauceri Marcin Zielinski Peter J. Wellmann |
| spellingShingle |
Philipp Schuh Francesco La Via Marco Mauceri Marcin Zielinski Peter J. Wellmann Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth Materials 3C-SiC PVT sublimation sandwich stress-free bulk large area |
| author_facet |
Philipp Schuh Francesco La Via Marco Mauceri Marcin Zielinski Peter J. Wellmann |
| author_sort |
Philipp Schuh |
| title |
Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth |
| title_short |
Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth |
| title_full |
Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth |
| title_fullStr |
Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth |
| title_full_unstemmed |
Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth |
| title_sort |
growth of large-area, stress-free, and bulk-like 3c-sic (100) using 3c-sic-on-si in vapor phase growth |
| publisher |
MDPI AG |
| series |
Materials |
| issn |
1996-1944 |
| publishDate |
2019-07-01 |
| description |
We report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are presented, indicating the upscale potential of this process. The nucleation and growth of cubic silicon carbide is supported by XRD and Raman measurements. The rocking curve data yield a full-width-at-half-maximum (FWHM) between 138 to 140 arc sec for such grown material. Analysis of the inbuilt stress of the bulk-like material shows no indications of any residual stress. |
| topic |
3C-SiC PVT sublimation sandwich stress-free bulk large area |
| url |
https://www.mdpi.com/1996-1944/12/13/2179 |
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