Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

We report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are presented, indicating the upscale potential of thi...

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Bibliographic Details
Main Authors: Philipp Schuh, Francesco La Via, Marco Mauceri, Marcin Zielinski, Peter J. Wellmann
Format: Article
Language:English
Published: MDPI AG 2019-07-01
Series:Materials
Subjects:
3C-SiC
PVT
sublimation sandwich
stress-free
bulk
large area
Online Access:https://www.mdpi.com/1996-1944/12/13/2179

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https://www.mdpi.com/1996-1944/12/13/2179

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