Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

We report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are presented, indicating the upscale potential of thi...

Full description

Bibliographic Details
Main Authors: Philipp Schuh, Francesco La Via, Marco Mauceri, Marcin Zielinski, Peter J. Wellmann
Format: Article
Language:English
Published: MDPI AG 2019-07-01
Series:Materials
Subjects:
3C-SiC
PVT
sublimation sandwich
stress-free
bulk
large area
Online Access:https://www.mdpi.com/1996-1944/12/13/2179
Description
Summary:We report on the reproducible growth of two inch 3C-SiC crystals using the transfer of chemical vapor deposition (CVD)-grown (100) oriented epitaxial layers. Additional experiments, in which the diameter of the free-standing layers is increased, are presented, indicating the upscale potential of this process. The nucleation and growth of cubic silicon carbide is supported by XRD and Raman measurements. The rocking curve data yield a full-width-at-half-maximum (FWHM) between 138 to 140 arc sec for such grown material. Analysis of the inbuilt stress of the bulk-like material shows no indications of any residual stress.
ISSN:1996-1944

Similar Items