Features of the model of main information failures in digital CMOS VLSI at impact of the radiation

• Main Authors: Vyacheslav M. Barbashov, Nikolai S. Trushkin
• Format: Article
• Language: English
• Published: Moscow Engineering Physics Institute 2018-03-01
• Series: Bezopasnostʹ Informacionnyh Tehnologij
• Subjects: topological probabilistic models, fuzzy probability, areas of uncertainty.
• Online Access: https://bit.mephi.ru/index.php/bit/article/view/1091

The methods of information security, which are based on the use of functional-logical modeling of very large digital integrated circuits (VLSI) under the influence of ionizing radiation are considered. It is shown that the multiplicity of the node and the power of the spectrum are more accurately described when using the concept of fuzzy multiplicity. Methods are proposed for predicting LSI failures when exposed to ionizing radiation, which are based on the model of fuzzy digital and probabilistic reliability automata. Moreover, the nature of their changes during irradiation depends on many factors, including the type of radiation, its intensity and range, type a criteria parameter characterizing the radiation resistance of ICs and work mode. Therefore, in different ranges of levels or intensities of the impact of the IC model can be either of fuzzy or probabilistic nature. Carrying out such a comparison is an essential step in the overall analysis of the IC radiation resistance.