Frequency Multiplier and Mixer MMICs Based on a Metamorphic HEMT Technology Including Schottky Diodes

Frequency Multiplier and Mixer MMICs Based on a Metamorphic HEMT Technology Including Schottky Diodes

This paper reports on the monolithic integration of layout-optimized Schottky diodes realized in an established 50-nm gate-length metamorphic high-electron-mobility transistor technology for use in multifunctional nonlinear circuits. The suitability of the realized Schottky diodes is demonstrated by...

Full description

Bibliographic Details
Main Authors: Fabian Thome, Erdin Ture, Robert Iannucci, Arnulf Leuther, Frank Schafer, Alessandro Navarrini, Patrice Serres
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
High-electron-mobility transistors (HEMTs)
Ku-band
millimeter wave (mmW)
monolithic microwave integrated circuits (MMICs)
mixers
frequency multipliers
Online Access:https://ieeexplore.ieee.org/document/8955885/

Internet

https://ieeexplore.ieee.org/document/8955885/

Similar Items