Effect of SiC substrate properties on structural perfection and electrical parameters of AlGaN/GaN layers
We have analyzed the effect of volume and surface defects in SiC substrates on the structure and electrophysical parameters of AlGaN/GaN epitaxial heterostructures grown on them. Regions with internal stresses usually induced by carbon rich disk-shaped inclusions have been detected in the initial su...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2017-03-01
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| Series: | Modern Electronic Materials |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2452177917300282 |