Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC

Analysis of the Basal Plane Dislocation Density and Thermomechanical Stress during 100 mm PVT Growth of 4H-SiC

Basal plane dislocations (BPDs) in 4H silicon carbide (SiC) crystals grown using the physical vapor transport (PVT) method are diminishing the performance of SiC-based power electronic devices such as pn-junction diodes or MOSFETs. Therefore, understanding the generation and movement of BPDs is cruc...

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Bibliographic Details
Main Authors: Johannes Steiner, Melissa Roder, Binh Duong Nguyen, Stefan Sandfeld, Andreas Danilewsky, Peter J. Wellmann
Format: Article
Language:English
Published: MDPI AG 2019-07-01
Series:Materials
Subjects:
silicon carbide
physical vapor transport
basal plane dislocation
small angle grain boundary
thermal stress
Online Access:https://www.mdpi.com/1996-1944/12/13/2207

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https://www.mdpi.com/1996-1944/12/13/2207

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