Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates

Strain-Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates

Abstract This paper reports the photoluminescence (PL) properties of InGaN/GaN multiple quantum well (MQW) light-emitting diodes grown on silicon substrates which were designed with different tensile stress controlling architecture like periodic Si δ-doping to the n-type GaN layer or inserting InGaN...

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Bibliographic Details
Main Authors: Tao Lin, Zhi Yan Zhou, Yao Min Huang, Kun Yang, Bai Jun Zhang, Zhe Chuan Feng
Format: Article
Language:English
Published: SpringerOpen 2018-08-01
Series:Nanoscale Research Letters
Subjects:
InGaN/GaN multiple quantum well
Luminescence
Time-resolved photoluminescence
Silicon substrate
Online Access:http://link.springer.com/article/10.1186/s11671-018-2663-6

Internet

http://link.springer.com/article/10.1186/s11671-018-2663-6

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