Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the...

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Bibliographic Details
Main Authors: Jingjin Wu, Yinchao Zhao, Ce Zhou Zhao, Li Yang, Qifeng Lu, Qian Zhang, Jeremy Smith, Yongming Zhao
Format: Article
Language:English
Published: MDPI AG 2016-08-01
Series:Materials
Subjects:
Online Access:http://www.mdpi.com/1996-1944/9/8/695