Improvement of p-Type AlGaN Conductivity with an Alternating Mg-Doped/Un-Doped AlGaN Layer Structure

Improvement of p-Type AlGaN Conductivity with an Alternating Mg-Doped/Un-Doped AlGaN Layer Structure

Using molecular beam epitaxy, we prepared seven p-type AlGaN samples of ~25% in Al content, including six samples with Mg-doped/un-doped AlGaN alternating-layer structures of different layer-thickness combinations, for comparing their p-type performances. Lower sheet resistance and higher effective...

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Bibliographic Details
Main Authors: Chi-Chung Chen, Yu-Ren Lin, Yu-Wei Lin, Yu-Cheng Su, Chung-Chi Chen, Ting-Chun Huang, Ping-Hsiu Wu, C. C. Yang, Shin Mou, Kent L. Averett
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Micromachines
Subjects:
p-type AlGaN
Mg doping
alternating-layer structure
hole mobility
sheet resistance
Online Access:https://www.mdpi.com/2072-666X/12/7/835

Internet

https://www.mdpi.com/2072-666X/12/7/835

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